IRF711 MOSFET Transistor

The IRF711 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF711 transistor as follows.

IRF711 Transistor Specification

Transistor Code		IRF711
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	350V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.6Ohm
Power Dissipation (Maximum)	PD	36W
Operating Junction Temperature (Maximum)		150°C

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