IRF710PBF MOSFET Transistor

The IRF710PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF710PBF transistor as follows.

IRF710PBF Transistor Specification

Transistor Code		IRF710PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.6Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		34pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.9nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		17nC

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