IRF6893M MOSFET Transistor

The IRF6893M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6893M transistor as follows.

IRF6893M Transistor Specification

Transistor Code		IRF6893M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	29A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0016Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		1140pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		83nS
Gate-Threshold Voltage (Maximum)		2.1V
Total Gate Charge		25nC

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