IRF6810S MOSFET Transistor

The IRF6810S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6810S transistor as follows.

IRF6810S Transistor Specification

Transistor Code		IRF6810S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0052Ohm
Power Dissipation (Maximum)	PD	20W
Operating Junction Temperature (Maximum)		150°C

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