IRF6798M MOSFET Transistor

The IRF6798M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6798M transistor as follows.

IRF6798M Transistor Specification

Transistor Code		IRF6798M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	197A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0013Ohm
Power Dissipation (Maximum)	PD	78W
Total Gate Charge		50nC

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