IRF6729M MOSFET Transistor

The IRF6729M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6729M transistor as follows.

IRF6729M Transistor Specification

Transistor Code		IRF6729M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	190A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0018Ohm
Power Dissipation (Maximum)	PD	104W
Total Gate Charge		42nC

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