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IRF6726M MOSFET Transistor

The IRF6726M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6726M transistor as follows.

Circuit diagram symbol of the IRF6726M transistor

IRF6726M Transistor Specification

Transistor Code IRF6726M
Transistor Type MOSFET
Control Channel Type N-Channel
Package DIRECTFET
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 180A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0017Ohm
Power Dissipation (Maximum) PD 89W
Total Gate Charge 51nC

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