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IRF6645 MOSFET Transistor

The IRF6645 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6645 transistor as follows.

Circuit diagram symbol of the IRF6645 transistor

IRF6645 Transistor Specification

Transistor Code IRF6645
Transistor Type MOSFET
Control Channel Type N-Channel
Package DIRECTFET
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.035Ohm
Power Dissipation (Maximum) PD 42W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.9V

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