IRF6641 MOSFET Transistor

The IRF6641 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6641 transistor as follows.

IRF6641 Transistor Specification

Transistor Code		IRF6641
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0599Ohm
Power Dissipation (Maximum)	PD	89W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		34nC

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