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IRF6633APBF MOSFET Transistor

The IRF6633APBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6633APBF transistor as follows.

Circuit diagram symbol of the IRF6633APBF transistor

IRF6633APBF Transistor Specification

Transistor Code IRF6633APBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package DIRECTFET
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0056Ohm
Power Dissipation (Maximum) PD 2.3W
Drain-Source Capacitance 680pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 2.2V
Total Gate Charge 11nC

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