IRF6622 MOSFET Transistor

The IRF6622 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6622 transistor as follows.

IRF6622 Transistor Specification

Transistor Code		IRF6622
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	59A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0063Ohm
Power Dissipation (Maximum)	PD	34W
Operating Junction Temperature (Maximum)		150°C

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