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IRF6619 MOSFET Transistor

The IRF6619 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6619 transistor as follows.

Circuit diagram symbol of the IRF6619 transistor

IRF6619 Transistor Specification

Transistor Code IRF6619
Transistor Type MOSFET
Control Channel Type N-Channel
Package DIRECTFET
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 150A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0022Ohm
Power Dissipation (Maximum) PD 89W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2.45V
Total Gate Charge 38nC

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