IRF6616 MOSFET Transistor

The IRF6616 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6616 transistor as follows.

IRF6616 Transistor Specification

Transistor Code		IRF6616
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	2.8W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.25V
Total Gate Charge		29nC

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