IRF6613 MOSFET Transistor

The IRF6613 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6613 transistor as follows.

IRF6613 Transistor Specification

Transistor Code		IRF6613
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0034Ohm
Power Dissipation (Maximum)	PD	2.8W
Total Gate Charge		42nC

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