IRF6610 MOSFET Transistor

The IRF6610 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6610 transistor as follows.

IRF6610 Transistor Specification

Transistor Code		IRF6610
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0068Ohm
Power Dissipation (Maximum)	PD	2.2W

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