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IRF6602 MOSFET Transistor

The IRF6602 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6602 transistor as follows.

Circuit diagram symbol of the IRF6602 transistor

IRF6602 Transistor Specification

Transistor Code IRF6602
Transistor Type MOSFET
Control Channel Type N-Channel
Package DIRECTFET
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 2.3W
Drain-Source Capacitance 960pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 2.3V
Total Gate Charge 12nC

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