IRF644PBF MOSFET Transistor

The IRF644PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF644PBF transistor as follows.

IRF644PBF Transistor Specification

Transistor Code		IRF644PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		330pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		68nC

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