IRF644N MOSFET Transistor

The IRF644N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF644N transistor as follows.

IRF644N Transistor Specification

Transistor Code		IRF644N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		54nC

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