IRF640NLPBF MOSFET Transistor

The IRF640NLPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF640NLPBF transistor as follows.

IRF640NLPBF Transistor Specification

Transistor Code		IRF640NLPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		185pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		67nC

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