IRF640FI MOSFET Transistor

The IRF640FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF640FI transistor as follows.

IRF640FI Transistor Specification

Transistor Code		IRF640FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT220
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		2100pF
Operating Junction Temperature (Maximum)		150°C

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