IRF634NSPBF MOSFET Transistor

The IRF634NSPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF634NSPBF transistor as follows.

IRF634NSPBF Transistor Specification

Transistor Code		IRF634NSPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.435Ohm
Power Dissipation (Maximum)	PD	88W
Drain-Source Capacitance		84pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		34nC

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