IRF630NLPBF MOSFET Transistor

The IRF630NLPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF630NLPBF transistor as follows.

IRF630NLPBF Transistor Specification

Transistor Code		IRF630NLPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	82W
Drain-Source Capacitance		89pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		35nC

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