IRF630NL MOSFET Transistor

The IRF630NL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF630NL transistor as follows.

IRF630NL Transistor Specification

Transistor Code		IRF630NL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	82W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		23.3nC

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