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IRF621FI MOSFET Transistor

The IRF621FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF621FI transistor as follows.

Circuit diagram symbol of the IRF621FI transistor

IRF621FI Transistor Specification

Transistor Code IRF621FI
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOWATT220
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 60nS

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