IRF6218L MOSFET Transistor

The IRF6218L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6218L transistor as follows.

IRF6218L Transistor Specification

Transistor Code		IRF6218L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		71nC

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