IRF6215S MOSFET Transistor

The IRF6215S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6215S transistor as follows.

IRF6215S Transistor Specification

Transistor Code		IRF6215S
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	110W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		44nC

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