IRF615 MOSFET Transistor

The IRF615 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF615 transistor as follows.

IRF615 Transistor Specification

Transistor Code		IRF615
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	43W
Operating Junction Temperature (Maximum)		150°C

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