IRF614PBF MOSFET Transistor

The IRF614PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF614PBF transistor as follows.

IRF614PBF Transistor Specification

Transistor Code		IRF614PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		42pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.6nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.2nC

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