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IRF613 MOSFET Transistor

The IRF613 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF613 transistor as follows.

Circuit diagram symbol of the IRF613 transistor

IRF613 Transistor Specification

Transistor Code IRF613
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 150V
Drain Current (Maximum) ID 2.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.4Ohm
Power Dissipation (Maximum) PD 43W
Operating Junction Temperature (Maximum) 150°C

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