IRF610A MOSFET Transistor

The IRF610A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF610A transistor as follows.

IRF610A Transistor Specification

Transistor Code		IRF610A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C

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