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IRF6100 MOSFET Transistor

The IRF6100 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6100 transistor as follows.

Circuit diagram symbol of the IRF6100 transistor

IRF6100 Transistor Specification

Transistor Code IRF6100
Transistor Type MOSFET
Control Channel Type P-Channel
Package FLIPFET
Transistor SMD Code A
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.065Ohm
Power Dissipation (Maximum) PD 2.2W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 14nC

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