IRF5Y5305CM MOSFET Transistor

The IRF5Y5305CM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5Y5305CM transistor as follows.

IRF5Y5305CM Transistor Specification

Transistor Code		IRF5Y5305CM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		495pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		70nC

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