IRF5Y31N20 MOSFET Transistor

The IRF5Y31N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5Y31N20 transistor as follows.

IRF5Y31N20 Transistor Specification

Transistor Code		IRF5Y31N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.092Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		148nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		100nC

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