IRF5NJ5305 MOSFET Transistor

The IRF5NJ5305 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5NJ5305 transistor as follows.

IRF5NJ5305 Transistor Specification

Transistor Code		IRF5NJ5305
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SMD-0.5
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		495pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		70nC

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