IRF5N3710 MOSFET Transistor

The IRF5N3710 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5N3710 transistor as follows.

IRF5N3710 Transistor Specification

Transistor Code		IRF5N3710
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD1
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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