IRF5N3415 MOSFET Transistor

The IRF5N3415 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5N3415 transistor as follows.

IRF5N3415 Transistor Specification

Transistor Code		IRF5N3415
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD1
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	37.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		560pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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