IRF5M5210 MOSFET Transistor

The IRF5M5210 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5M5210 transistor as follows.

IRF5M5210 Transistor Specification

Transistor Code		IRF5M5210
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-254AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		824pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		180nC

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