IRF5M3415 MOSFET Transistor

The IRF5M3415 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5M3415 transistor as follows.

IRF5M3415 Transistor Specification

Transistor Code		IRF5M3415
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-254AA
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		570pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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