IRF5806 MOSFET Transistor

The IRF5806 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5806 transistor as follows.

IRF5806 Transistor Specification

Transistor Code		IRF5806
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.086Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.2V

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