IRF5805PBF MOSFET Transistor

The IRF5805PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5805PBF transistor as follows.

IRF5805PBF Transistor Specification

Transistor Code		IRF5805PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.098Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		79pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		11nC

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