IRF5805 MOSFET Transistor

The IRF5805 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5805 transistor as follows.

IRF5805 Transistor Specification

Transistor Code		IRF5805
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.098Ohm
Power Dissipation (Maximum)	PD	2W
Gate-Threshold Voltage (Maximum)		2.5V

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