IRF5804 MOSFET Transistor

The IRF5804 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5804 transistor as follows.

IRF5804 Transistor Specification

Transistor Code		IRF5804
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.198Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		430nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		14nC

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