IRF5801 MOSFET Transistor

The IRF5801 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5801 transistor as follows.

IRF5801 Transistor Specification

Transistor Code		IRF5801
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	2W

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