IRF5800 MOSFET Transistor

The IRF5800 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5800 transistor as follows.

IRF5800 Transistor Specification

Transistor Code		IRF5800
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		94pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		11.4nC

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