IRF540NLPBF MOSFET Transistor

The IRF540NLPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF540NLPBF transistor as follows.

IRF540NLPBF Transistor Specification

Transistor Code		IRF540NLPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.044Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		71nC

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