IRF5210PBF MOSFET Transistor

The IRF5210PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5210PBF transistor as follows.

IRF5210PBF Transistor Specification

Transistor Code		IRF5210PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		790pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		180nC

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