IRF520NLPBF MOSFET Transistor

The IRF520NLPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF520NLPBF transistor as follows.

IRF520NLPBF Transistor Specification

Transistor Code		IRF520NLPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		92pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		25nC

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