IRF512 MOSFET Transistor

The IRF512 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF512 transistor as follows.

IRF512 Transistor Specification

Transistor Code		IRF512
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	4.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	43W
Operating Junction Temperature (Maximum)		150°C

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