IRF460B MOSFET Transistor

The IRF460B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF460B transistor as follows.

IRF460B Transistor Specification

Transistor Code		IRF460B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		870pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		4V

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