IRF4410H MOSFET Transistor

The IRF4410H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF4410H transistor as follows.

IRF4410H Transistor Specification

Transistor Code		IRF4410H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	97A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		430pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		52nS
Gate-Threshold Voltage (Maximum)		4V

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